FDB6035L中文资料PDF规格书
FDB6035L规格书详情
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
● 58 A, 30 V. RDS(ON) = 0.011 W @ VGS=10 V
RDS(ON) = 0.019 W @ VGS=4.5 V.
● Low gate charge (typical 34 nC).
● Low Crss (typical 175 pF).
● Fast switching speed.
产品属性
- 型号：
FDB6035L
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAI |
2018+ |
TO263 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
VBSEMI |
19+ |
TO-263AB |
29600 |
绝对原装现货,价格优势! |
询价 | ||
FAIRCHILD/仙童 |
23+ |
D2-PAKTO-263 |
24190 |
原装正品代理渠道价格优势 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
SOT-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAI |
22+23+ |
TO263 |
75952 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
FAIRCHILD/FSC/仙童飞兆半 |
2008++ |
TO-263 |
6800 |
新进库存/原装 |
询价 | ||
FSC |
2023+ |
SOP |
3000 |
进口原装现货 |
询价 | ||
仙童 |
06+ |
TO-263 |
3500 |
原装 |
询价 | ||
FAIRCHILD/仙童 |
24+23+ |
TO263 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
FAIRCHIL |
2023+ |
TO-263 |
50000 |
原装现货 |
询价 |
