LT6001IDD

Single,DualandQuad,1.8V,13uAPrecisionRail-to-RailOpAmps

M6001

9x14mmFR-4,5.0or3.3Volt,HCMOS/TTL,TCXOandVCTCXO

MtronPTIisoneofthefirstcompaniestointroduceafamilyoflowvoltage,surfacemountTCXO’sandVCTCXO’s(voltagecontrolledTCXO)thataredesignedtoprovidenetworkandwirelessengineerswithproductsthatoffertightstabilityandexcellentagingcharacteristics.TheM6001-6004Seriesu

M6001

9x14mmFR-4,5.0or3.3Volt,HCMOS/TTL,TCXOandVCTCXO

M6001

9x14mmFR-4,5.0or3.3Volt,HCMOS/TTL,TCXOandTCVCXO

M6001

HEYbrid™StainlessSteelLiquidTightCordgrips

MA6001

Dual1.5A1.5MHzSynchronousBuckConverter

MAX6001

Low-Cost,Low-Power,Low-Dropout,SOT23-3VoltageReferences

GeneralDescription TheMAX6001–MAX6005familyofSOT23,low-costseriesvoltagereferencesmeetsthecostadvantageofshuntreferencesandoffersthepower-savingadvantageofseriesreferences,whichtraditionallycostmore.Unlikeconventionalshunt-mode(two-terminal)referencesthatmustbe

MAX6001EUR-T

Low-Cost,Low-Power,Low-Dropout,SOT23-3VoltageReferences

GeneralDescription TheMAX6001–MAX6005familyofSOT23,low-costseriesvoltagereferencesmeetsthecostadvantageofshuntreferencesandoffersthepower-savingadvantageofseriesreferences,whichtraditionallycostmore.Unlikeconventionalshunt-mode(two-terminal)referencesthatmustbe

MBI6001

TRANSFORMERLESSAC/DCCONSTANTCURRENTDRIVER

MCH6001

NPNEpitaxialPlanarSiliconCompositeTransistorHighFrequencyLow-NoiseAmplifier

NPNEpitaxialPlanarSiliconCompositeTransistor Features •Low-noiseuse:NF=1.2dBtyp(f=1GHz). •Highcut-offfrequency:fT=16GHztyp(VCE=5V). •Highgain:|S21e|2=16dBtyp(f=1GHz). •Compositetypewith2RFtransistorMCH4020inonepackagefacilitatinghigh-densitymounting.