LMBT4401LT1

General Purpose Transistor

GeneralPurposeTransistor •Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

LMBT4401LT1G

General Purpose Transistor

GeneralPurposeTransistor •Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

LMBT4401LT1G

Marking：2X；Package：SOT-23；We declare that the material of product compliant with RoHS requirements and Halogen Free

FEATURES 1)Wedeclarethatthematerialofproductcompliantwith RoHSrequirementsandHalogenFree. 2)S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC-Q101 QualifiedandPPAPCapable.

LMBT4401LT1G_15

General Purpose Transistor

MMBT4401LT1

TRANSISTOR(NPN)

Features •Powerdissipation PCM:0.225W(Tamb=25°C) •PluseDrain ICM:0.6mA •ReverseVoltage V(BR)CBO:60V •Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55Cto+150C

MMBT4401LT1

SwitchingTransistor(NPNSilicon)

SwitchingTransistor NPNSilicon Features •Pb−FreePackageisAvailable

MMBT4401LT1

SwitchingTransistor

SwitchingTransistor NPNSilicon

MMBT4401LT1

GeneralPurposeTransistor(NPNSilicon)

GeneralPurposeTransistors NPNSilicon

MMBT4401LT1

GeneralPurposeTransistor

•WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

MMBT4401LT1

SOT-23Plastic-EncapsulateTransistors

FEATURES Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃