丝印：AP50P04D；Package：TO-252；-40V P-Channel Enhancement Mode MOSFET

文件：2.94205 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

MOSFET场效应管

Leiditech

雷卯电子

P-Channel Enhancement Mode Field Effect Transistor

文件：558.31 Kbytes 页数：5 Pages

MCC

P-Channel 40 V (D-S) MOSFET

文件：1.07823 Mbytes 页数：9 Pages

VBSEMI

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −25 A) • Low input capacitance Ci

文件：181.45 Kbytes 页数：7 Pages

NEC

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