LMAK50P04

Marking：AP50P04D；Package：TO-252；-40V P-Channel Enhancement Mode MOSFET

MCU50P04

P-ChannelEnhancementModeFieldEffectTransistor

ME50P04

P-Channel40V(D-S)MOSFET

NP50P04KDG

ProductScoutAutomotive

NP50P04KDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP50P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=10mΩMAX.(VGS=−10V,ID=−25A) RDS(on)2=15mΩMAX.(VGS=−4.5V,ID=−25A) •Lowinputcapacitance Ci

NP50P04SDG

P-Channel40V(D-S)MOSFET

NP50P04SDG

ProductScoutAutomotive

NP50P04SLG

MOSFIELDEFFECTTRANSISTOR

Description TheNP50P04SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance ⎯RDS(on)1=9.6mΩMAX.(VGS=−10V,ID=−25A) ⎯RDS(on)2=15mΩMAX.(VGS=−4.5V,ID=−25A) •Lowinputcapacitance

NP50P04SLG

P-Channel40V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested

PJD50P04

40VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-10A