LOW POWER DUAL OPERATIONAL AMPLIFIERS

Description This circuit consists of two independent, high gain, internally frequency-compensated operational amplifiers designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages. The low power supply drain is indepen

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STMICROELECTRONICS

意法半导体

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

文件：93.95 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

文件：56.67 Kbytes 页数：8 Pages

NEC

瑞萨

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

文件：56.67 Kbytes 页数：8 Pages

NEC

瑞萨