MJE13009F

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage:VCEO(SUS)=400V(Min.) ·CollectorSaturationVoltage:VCE(sat)=1.5(Max)@IC=8.0A ·SwitchingTime:tf=0.7μs(Max.)@IC=8.0A APPLICATIONS ·Designedforuseinhigh-voltage,high-speed,powerswitchingininductivecircuit,

MJE13009G

NPNSiliconPowerTransistors

SWITCHMODE™Series NPNSiliconPowerTransistors TheMJE13009isdesignedforhigh−voltage,high−speedpowerswitchinginductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedfor115and220VSWITCHMODEapplicationssuchasSwitchingRegulators,Inverters,MotorControls,S

MJE13009G

12AMPERENPNSILICONPOWERTRANSISTOR400VOLTS??100WATTS

MJE13009-K

SWITCHMODESERIESNPNSILICONPOWERTRANSISTORS

MJE13009L

MJELOWVOLTAGESERIESTRANSISTORS

MJE13009P

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS Purpose:Highfrequencyelectroniclightingballastapplications.

MJE13009-P

SWITCHMODESERIESNPNSILICONPOWERTRANSISTORS

MJE13009-Q

NPNBIPOLARPOWERTRANSISTORFORSWITCHINGAPPLICATIONS

MJF13009

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage:VCEO(SUS)=400V(Min.) •CollectorSaturationVoltage:VCE(sat)=1.5(Max)@IC=8.0A •SwitchingTime:tf=0.7μs(Max.)@IC=8.0A APPLICATIONS •Designedforuseinhigh-voltage,high-speed,powerswitchingininductivecircuit,theyar

MJF13009

SiliconNPNPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage:VCEO(SUS)=400V(Min.) •CollectorSaturationVoltage:VCE(sat)=1.5(Max)@IC=8.0A •SwitchingTime:tf=0.7μs(Max.)@IC=8.0A APPLICATIONS •Designedforuseinhigh-voltage,high-speed,powerswitchingininductivecircuit,theyar