High Power LED Series 3535 Ceramic Hot Binning

High efficacy and high quality color rendering makes the LH351C suitable use in a broad range of applications Features & Benefits • Operates at a maximum current of up to 2 A • Uniform light distribution under any beam angle • 90 CRI makes it well suited for most applications • Hot binning

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SAMSUNG

三星

3535 LEDs

• Wattage (Max) : 6.0 W @ 2.0 A\n• Luminous Flux: 351 lm @ 700 mA\n• Luminous Efficacy: 178 lm/W

Samsung

三星

Square Type

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PANASONIC

松下

SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes)

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RECTRON

丽正

Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum

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NTE