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LF353DR.A

丝印:LF353;Package:SOIC;LF353 Wide-Bandwidth JFET-Input Dual Operational Amplifier

1 Features 1• Low Input Bias Current 50 pA Typical • Low Input Noise Current 0.01 pA/√Hz Typical • Low Supply Current 3.6 mA Typical • High Input Impedance 1012 Ω Typical • Internally-Trimmed Offset Voltage • Gain Bandwidth 3 MHz Typical • High Slew Rate 13 V/μs Typical 2 Applications •

文件:881.08 Kbytes 页数:21 Pages

TI

德州仪器

LF353M/NOPB

丝印:LF353M;Package:SOIC;LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

1FEATURES 2• Internally Trimmed Offset Voltage: 10 mV • Low Input Bias Current: 50pA • Low Input Noise Voltage: 25 nV/√Hz • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 3.6 mA • High Input Impedance: 1012Ω • Low Total Ha

文件:1.09486 Mbytes 页数:19 Pages

TI

德州仪器

LF353M/NOPB.B

丝印:LF353M;Package:SOIC;LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

1FEATURES 2• Internally Trimmed Offset Voltage: 10 mV • Low Input Bias Current: 50pA • Low Input Noise Voltage: 25 nV/√Hz • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 3.6 mA • High Input Impedance: 1012Ω • Low Total Ha

文件:1.09486 Mbytes 页数:19 Pages

TI

德州仪器

LF353MSLASHNOPB

丝印:LF353M;Package:SOIC;LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

1FEATURES 2• Internally Trimmed Offset Voltage: 10 mV • Low Input Bias Current: 50pA • Low Input Noise Voltage: 25 nV/√Hz • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 3.6 mA • High Input Impedance: 1012Ω • Low Total Ha

文件:1.09486 Mbytes 页数:19 Pages

TI

德州仪器

LF353MSLASHNOPB.B

丝印:LF353M;Package:SOIC;LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

1FEATURES 2• Internally Trimmed Offset Voltage: 10 mV • Low Input Bias Current: 50pA • Low Input Noise Voltage: 25 nV/√Hz • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 3.6 mA • High Input Impedance: 1012Ω • Low Total Ha

文件:1.09486 Mbytes 页数:19 Pages

TI

德州仪器

LF353MX/NOPB

丝印:LF353M;Package:SOIC;LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

1FEATURES 2• Internally Trimmed Offset Voltage: 10 mV • Low Input Bias Current: 50pA • Low Input Noise Voltage: 25 nV/√Hz • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 3.6 mA • High Input Impedance: 1012Ω • Low Total Ha

文件:1.09486 Mbytes 页数:19 Pages

TI

德州仪器

LF353MX/NOPB.B

丝印:LF353M;Package:SOIC;LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

1FEATURES 2• Internally Trimmed Offset Voltage: 10 mV • Low Input Bias Current: 50pA • Low Input Noise Voltage: 25 nV/√Hz • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 3.6 mA • High Input Impedance: 1012Ω • Low Total Ha

文件:1.09486 Mbytes 页数:19 Pages

TI

德州仪器

LF353MXSLASHNOPB

丝印:LF353M;Package:SOIC;LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

1FEATURES 2• Internally Trimmed Offset Voltage: 10 mV • Low Input Bias Current: 50pA • Low Input Noise Voltage: 25 nV/√Hz • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 3.6 mA • High Input Impedance: 1012Ω • Low Total Ha

文件:1.09486 Mbytes 页数:19 Pages

TI

德州仪器

LF353MXSLASHNOPB.B

丝印:LF353M;Package:SOIC;LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

1FEATURES 2• Internally Trimmed Offset Voltage: 10 mV • Low Input Bias Current: 50pA • Low Input Noise Voltage: 25 nV/√Hz • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 3.6 mA • High Input Impedance: 1012Ω • Low Total Ha

文件:1.09486 Mbytes 页数:19 Pages

TI

德州仪器

LF353N/NOPB

丝印:LF353N;Package:PDIP;LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

1FEATURES 2• Internally Trimmed Offset Voltage: 10 mV • Low Input Bias Current: 50pA • Low Input Noise Voltage: 25 nV/√Hz • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 3.6 mA • High Input Impedance: 1012Ω • Low Total Ha

文件:1.09486 Mbytes 页数:19 Pages

TI

德州仪器

技术参数

  • Rail-to-rail:

    In to V+

  • GBW (Typ) (MHz):

    3

  • Slew rate (Typ) (V/us):

    13

  • Vos (offset voltage @ 25 C) (Max) (mV):

    10

  • Iq per channel (Typ) (mA):

    1.8

  • Vn at 1 kHz (Typ) (nV/rtHz):

    18

  • Rating:

    Catalog

  • Operating temperature range (C):

    0 to 70

  • Offset drift (Typ) (uV/C):

    10

  • Features:

  • Input bias current (Max) (pA):

    200

  • CMRR (Typ) (dB):

    100

  • Output current (Typ) (mA):

    20

  • Architecture:

    FET

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更多LF353供应商 更新时间2025-10-30 13:38:00