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LF356

LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件:2.10242 Mbytes 页数:47 Pages

TI

德州仪器

LF356

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件:250.11 Kbytes 页数:14 Pages

STMICROELECTRONICS

意法半导体

LF356D

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件:250.11 Kbytes 页数:14 Pages

STMICROELECTRONICS

意法半导体

LF356M/NOPB

丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件:2.10242 Mbytes 页数:47 Pages

TI

德州仪器

LF356M/NOPB.B

丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件:2.10242 Mbytes 页数:47 Pages

TI

德州仪器

LF356MSLASHNOPB

丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件:2.10242 Mbytes 页数:47 Pages

TI

德州仪器

LF356MSLASHNOPB.B

丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件:2.10242 Mbytes 页数:47 Pages

TI

德州仪器

LF356MX/NOPB

丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件:2.10242 Mbytes 页数:47 Pages

TI

德州仪器

LF356MX/NOPB.B

丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件:2.10242 Mbytes 页数:47 Pages

TI

德州仪器

LF356MXSLASHNOPB

丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件:2.10242 Mbytes 页数:47 Pages

TI

德州仪器

技术参数

  • IAV:

    1

  • IR:

    5

  • TRR:

    150

  • Package:

    eSGB

  • Feature:

    Glass Passivated

供应商型号品牌批号封装库存备注价格
Apex Tool Group/Cooper Tools
2022+
1
全新原装 货期两周
询价
TI/德州仪器
26+
原厂封装
10280
询价
NA
26+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
询价
ST
26+
NA
45000
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
询价
HARRIS/哈里斯
25+
DIP8
18000
原装正品,全新来谈
询价
ST/意法半导体
2021+
8-DIP
1000
只做原装,可提供样品
询价
FSC
26+
DIP-8
90000
一级代理商进口原装现货、假一罚十价格合理
询价
TI(德州仪器)
25+26+
PDIP,SOIC
3000
全网低价,原装原包
询价
NS45
2001
DIP
100
询价
NS
2026+
SOP14
28433
原盘现货/2500
询价
更多LF3供应商 更新时间2026-10-23 9:50:00