| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 页数:47 Pages | TI 德州仪器 | TI | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup 文件:250.11 Kbytes 页数:14 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup 文件:250.11 Kbytes 页数:14 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 页数:47 Pages | TI 德州仪器 | TI | ||
丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 页数:47 Pages | TI 德州仪器 | TI | ||
丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 页数:47 Pages | TI 德州仪器 | TI | ||
丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 页数:47 Pages | TI 德州仪器 | TI | ||
丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 页数:47 Pages | TI 德州仪器 | TI | ||
丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 页数:47 Pages | TI 德州仪器 | TI | ||
丝印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 页数:47 Pages | TI 德州仪器 | TI |
替换型号
技术参数
- IAV:
1
- IR:
5
- TRR:
150
- Package:
eSGB
- Feature:
Glass Passivated
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Apex Tool Group/Cooper Tools |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
TI/德州仪器 |
26+ |
原厂封装 |
10280 |
询价 | |||
NA |
26+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
询价 | ||
ST |
26+ |
NA |
45000 |
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品 |
询价 | ||
HARRIS/哈里斯 |
25+ |
DIP8 |
18000 |
原装正品,全新来谈 |
询价 | ||
ST/意法半导体 |
2021+ |
8-DIP |
1000 |
只做原装,可提供样品 |
询价 | ||
FSC |
26+ |
DIP-8 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 | ||
TI(德州仪器) |
25+26+ |
PDIP,SOIC |
3000 |
全网低价,原装原包 |
询价 | ||
NS45 |
2001 |
DIP |
100 |
询价 | |||
NS |
2026+ |
SOP14 |
28433 |
原盘现货/2500 |
询价 |
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