LC0406FC3.3C_07

LOW CAPACITANCE FLIP CHIP ARRAY

FEATURES ✔ESDProtection>25kilovolts ✔AvailableinVoltagesRangingFrom3.3Vto36V ✔200WattsPeakPulsePowerperLine(tp=8/20µs) ✔LowClampingVoltage ✔BidirectionalConfiguration&MonolithicStructure ✔Protects3to5Lines ✔LowCapacitance ✔LowLeakageCurrent ✔R

LC0406FC36C

LOW CAPACITANCE FLIP CHIP ARRAY

FEATURES ✔ESDProtection>25kilovolts ✔AvailableinVoltagesRangingFrom3.3Vto36V ✔200WattsPeakPulsePowerperLine(tp=8/20µs) ✔LowClampingVoltage ✔BidirectionalConfiguration&MonolithicStructure ✔Protects3to5Lines ✔LowCapacitance ✔LowLeakageCurrent ✔R

LC04-12

Dual Low Capacitance TVS Array for Telecom Line-Card Applications

DualLowCapacitanceTVSArrayforTelecomLine-CardApplications

LC04-12TB

Dual Low Capacitance TVS Array for Telecom Line-Card Applications

DualLowCapacitanceTVSArrayforTelecomLine-CardApplications

LC04-12TE

Dual Low Capacitance TVS Array for Telecom Line-Card Applications

DualLowCapacitanceTVSArrayforTelecomLine-CardApplications

LC04-6

Dual Low Capacitance TVS Array for Telecom LineCard Applications?

Description TheLC04-6hasbeenspecificallydesignedtoprotectsensitivecomponentswhichareconnectedtohighspeedtelecommunicationslinesfromovervoltagescausedbylightning,ESD(electrostaticdischarge),andEFT(electricalfasttransients). Features ◆Transientprotectionforhigh-s

LC04-6TB

Dual Low Capacitance TVS Array for Telecom LineCard Applications?

Description TheLC04-6hasbeenspecificallydesignedtoprotectsensitivecomponentswhichareconnectedtohighspeedtelecommunicationslinesfromovervoltagescausedbylightning,ESD(electrostaticdischarge),andEFT(electricalfasttransients). Features ◆Transientprotectionforhigh-s

LC04-6TE

Dual Low Capacitance TVS Array for Telecom LineCard Applications?

Description TheLC04-6hasbeenspecificallydesignedtoprotectsensitivecomponentswhichareconnectedtohighspeedtelecommunicationslinesfromovervoltagescausedbylightning,ESD(electrostaticdischarge),andEFT(electricalfasttransients). Features ◆Transientprotectionforhigh-s

LC05111CMT

Protection IC with integrated Power MOS FET

Overview TheLC05111CMTisaprotectionICfor1−celllithium−ionsecondarybatterieswithintegratedpowerMOSFET.Alsoitintegrateshighlyaccuratedetectioncircuitsanddetectiondelaycircuitstopreventbatteriesfromover−charging,over−discharging,over−currentdischargingandover−curre

LC0514P6

Marking：LC0514P6；Package：DFN3020P6；Transient Voltage Suppressors for ESD Protection

Features 600WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsFourlines Lowclampingvoltage Workingvoltages:5.0V Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)33A(8/20μs) IEC61000-4-2(ESD):±25kV(airdischarge) ±15kV(contactdischarge); Applicat