High voltage high and low-side 2 A gate driver

Features  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF load  3.3 V, 5 V TTL/CMOS inpu

文件：776.83 Kbytes 页数：20 Pages

STMICROELECTRONICS

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高压高侧和低侧2 A栅极驱动器

The L6498 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single chip half-bridge gate driver for the N-channel power MOSFET or IGBT.\n\n The high-side (floating) section is designed to stand a DC voltage rail up to 500 V, with 600 V transient withstand voltage. Th • Transient withstand voltage 600 V \n• dV/dt immunity ± 50 V/ns in full temperature range \n• Driver current capability: \n •2 A source typ. at 25 °C \n •2.5 A sink typ. at 25 °C \n• Short propagation delay: 85 ns \n• Switching times 25 ns rise/fall with 1 nF load \n• 3.3 V, 5 V TTL/CMOS inputs wit;

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意法半导体

High voltage high and low-side 2 A gate driver

Features  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF load  3.3 V, 5 V TTL/CMOS inpu

文件：776.83 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

High voltage high and low-side 2 A gate driver

Features  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF load  3.3 V, 5 V TTL/CMOS inpu

文件：776.83 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

High voltage high and low-side 2 A gate driver

Features  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF load  3.3 V, 5 V TTL/CMOS inpu

文件：776.83 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

High voltage high and low-side 2 A gate driver

Features  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF load  3.3 V, 5 V TTL/CMOS inpu

文件：776.83 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HI-SIDE/LO-SIDE 8SO

STMICROELECTRONICS

意法半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRV HI-SIDE/LO-SIDE 14SO

STMICROELECTRONICS

意法半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRV HI-SIDE/LO-SIDE 14SO

STMICROELECTRONICS

意法半导体