| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltage V(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconNPNPowerTransistor DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNtransistorinaTO-126PlasticPackage. Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features ComplementarypairwithBD238. Applications Mediumpowerlinearandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
NPNpowertransistors Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypesareBD236andBD238respectively. Features ■NPNtransistors Applications ■Audio, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
TO-126Plastic-EncapsulateTransistors FEATURES ComplementtoBD234/BD236/BD238respectively | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
LowvoltageNPNpowertransistors Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypeisBD238. Features ■Lowsaturationvoltage ■NPNtransistors Applications ■Audio, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
PlasticMediumPowerBipolarTransistors PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;> | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
NPNEpitaxialPlanarTransistors NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | WEITRON | ||
TO-126Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃ | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
MediumPowerLinearandSwitchingApplications MediumPowerLinearandSwitchingApplications •ComplementtoBD234/236/238respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PlasticMediumPowerSiliconNPNTransistor PlasticMediumPowerSiliconNPNTransistor ...designedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION TheBD235andBD237aresiliconepitaxial-baseNPNpowertransistorsinJedecSOT-32plasticpackageintededforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD236andBD238respectively. ■SGS-THOMSONPREFERREDSALESTYPES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedformediumpowerlinearandswitchingapplications. | DCCOMDc Components 直流元件直流元件有限公司 | DCCOM | ||
PlasticMediumPowerBipolarTransistors PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;> | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
DIP |
35777 |
只做原装现货工厂免费出样欢迎咨询订单 |
询价 | ||
ST |
22+ |
DIP |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
红狮 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
HAMAT |
2020+ |
SIP |
211 |
原装正品 公司现货 价格优惠 |
询价 | ||
MACOM |
23+ |
QFP44 |
18000 |
询价 | |||
MACOM |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
询价 | ||
TI/德州仪器 |
23+ |
TSSOP14 |
15000 |
全新原装现货,价格优势 |
询价 | ||
21+ |
TSSOP |
50000 |
全新原装正品现货,支持订货 |
询价 | |||
TSSOP |
970 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||||
TSSOP |
970 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 |
