US6 General Purpose Transistor NPN_N_CH 12V 0.5A 0.15W

. Including Two Devices in US6.\n  (Ultra Super Mini Type with 6 Leads). Simplify Circuit Design.. Reduce a Quantity of Parts and Manufacturing Process.;

KEC

EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：71.75 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

DUAL INDUCTOR

文件：24.28 Kbytes 页数：1 Pages

RHOMBUS-IND

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

文件：62.09 Kbytes 页数：2 Pages

Polyfet

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

文件：37.09 Kbytes 页数：2 Pages

Polyfet