EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR

POWER MANAGEMENT. FEATURES • Including two devices in US6. (Ultra Super mini type with 6 leads) • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

文件：106.78 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

US6 General Purpose Transistor PNP_N_CH -12V -0.5A 0.15W

. Including Two Devices in US6.\n  (Ultra Super Mini Type with 6 Leads). Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process;

KEC

开益禧

Low Power Single Op Amp

文件：237.25 Kbytes 页数：9 Pages

NSC

国半

Low Power Single Op Amp

文件：237.25 Kbytes 页数：9 Pages

NSC

国半

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min • 100

文件：114.98 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉