EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800~3200 (VCE=5.0V, IC=300mA). • Wide Area of Safe Operation. • Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).

文件：275.25 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：311.73 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

High hFE Transistor, TO-92L, 50V, 1A

• High DC Current Gain : hFE=800~3200 (VCE=5.0V, Ic=300mA)\n• Wide Area of Safe Operation\n• Low Collector saturation Voltage : VCE(sat)=0.17V (Ic=500mA, IB=5.0mA).;

KEC

EPITAXIAL PLANAR NPN TRANSISTOR (INDUSTRIAL USE HIGH CURRENT)

INDUSTRIAL USE. HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800(Min.)(VCE=5.0V, IC=300mA). • Wide Area of Safe Operation. • Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).

文件：363.24 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：311.73 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：311.73 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR (INDUSTRIAL USE HIGH CURRENT)

KEC