Epitaxial Planar NPN Transistor

FEATURES ● PC=1W(Mounted on ceramic substrate). ● Small flat package. ● Complementary: KTA1664.

文件：189.7 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Small Flat Package High Current Application Complementary to KTA1664

文件：395.93 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

S OT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High Current Application ● Complementary to KTA1664

文件：1.06725 Mbytes 页数：4 Pages

JIANGSU

长电科技

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

HIGH CURRENT APPLICATION. FEATURES • 1W (Mounted on Ceramic Substrate). • Small Flat Package. • Complementary to KTA1664.

文件：279.88 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

NPN Transistors

■ Features ● 1W (Mounted on Ceramic Substrate) ● Small Flat Package ● Complementary to KTA1664

文件：1.133 Mbytes 页数：2 Pages

KEXIN

科信电子

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Small flat package, complementary to KTA1664. Applications High current application.

文件：861.11 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：PO；Package：SOT-89；Epitaxial Planar NPN Transistor

FEATURES PC=1W(Mounted on ceramic substrate). Small flat package. Complementary: KTA1664.

文件：494.27 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: 800 mA Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：138.65 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

普通三极管

FOSAN

富信半导体

双极型晶体管

LGE

鲁光电子