丝印：WO；Package：SOT-323；NPN Silicon Epitaxial Planar Transistor

FEATURES ● Excellent HFE Linearity. ● Complementary to KTA2015 ● Power dissipation.(PC=100mW) APPLICATIONS ● General purpose and switching application.

文件：152.61 Kbytes 页数：3 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES ● Excellent hFE Linearity ● Complementary to KTA2015 APPLICATIONS ● General Purpose Switching

文件：483.15 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Excellent hFE Linearity ● Complementary to KTA2015 APPLICATIONS ● General Purpose Switching

文件：699.31 Kbytes 页数：3 Pages

JIANGSU

长电科技

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. • Complementary to KTA2015.

文件：118.78 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon NPN transistor in a SOT-323 Plastic Package

Descriptions Silicon NPN transistor in a SOT-323 Plastic Package. Features Complementary to KTA2015 Applications General purpose application, switching application.

文件：747.05 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

SOT-323 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearity Complementary to KTA2015 APPLICATIONS General Purpose Switching

文件：1.53766 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 100 mW (Tamb=25℃) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：130.639 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

普通三极管

FOSAN

富信半导体

双极型晶体管

LGE

鲁光电子

30V,0.5A,General Purpose NPN Bipolar Transistor

Galaxy

银河微电