EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

文件：399.71 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

丝印：LBL；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High and excellent DC current gain. ● Complementary to KTA2014. ● Small package. APPLICATIONS ● General purpose application. ● Switching application.

文件：233.52 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES ● Excellent hFE linearity ● High hFE ● Low Noise ● Complementary to KTA2014

文件：907.64 Kbytes 页数：3 Pages

HTSEMI

金誉半导体

TRANSISTOR竊뉿PN 竊

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 0.1 W（ Tamb=25℃） Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

文件：131.77 Kbytes 页数：2 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Excellent hFE linearity ● High hFE ● Low Noise ● Complementary to KTA2014

文件：182.62 Kbytes 页数：3 Pages

JIANGSU

长电科技

NPN Transistors

■ Features ● Excellent hFE Linearity ● Low Noise ● Complementary to KTA2014

文件：1.46798 Mbytes 页数：3 Pages

KEXIN

科信电子

丝印：LO/LY/LGR/LBL；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High and excellent DC current gain. ● Complementary to KTA2014. ● Small package. APPLICATIONS ● General purpose application. ● Switching application.

文件：1.09392 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

SOT-323 Plastic-Encapsulate Transistors

FEATURES Excellent hFE linearity High hFE Low Noise Complementary to KTA2014

文件：1.70973 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Plastic-Encapsulate Transistors

FEATURES • Excellent hFE linearity • High hFE • Low Noise • Complementary to KTA2014

文件：121.08 Kbytes 页数：2 Pages

MAKOSEMI

美科半导体

General, Purpose Apllication, Switching Application

文件：831.43 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司