EPITAXIAL PLANAR NPN TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Small Reverse Transfer Capacitance : Cre=0.7pF(Typ.) • Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

文件：431.96 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Small reverse transfer capacitance. ● Low noise figure. APPLICATIONS ● High frequency Low noise amplifier application. ● VHF band amplifier application.

文件：160.5 Kbytes 页数：3 Pages

BILIN

银河微电

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: 20 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：37.72 Kbytes 页数：1 Pages

JIANGSU

长电科技

丝印：AQR/AQO/AQY；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● Small reverse transfer capacitance. ● Low noise figure. APPLICATIONS ● High frequency Low noise amplifier application. ● VHF band amplifier application.

文件：1.07804 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

NPN Silicon Epitaxial Planar Transistor

文件：171.22 Kbytes 页数：3 Pages

BILIN

银河微电

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: 20 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：37.72 Kbytes 页数：1 Pages

JIANGSU

长电科技

NPN Silicon Epitaxial Planar Transistor

文件：171.22 Kbytes 页数：3 Pages

BILIN

银河微电

EPITAXIAL PLANAR NPN TRANSISTOR

文件：392.09 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

RF/VHF/UHF Transistor, SOT-23, 30V, 0.02A

• High Transition Frequency\n• Excellent hFE Linearity \n• Suitable for using TV Tuner, UHF Oscillator application;

KEC

双极型晶体管

LGE

鲁光电子