EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTA1225D/L.

文件：398.73 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 160V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：281.6 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 160V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：300.66 Kbytes 页数：2 Pages

ISC

无锡固电

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTA1225D/L.

文件：398.73 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

PITAXIAL PLANAR NPN TRANSISTOR

文件：404.36 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

General Purpose Transistor, DPAK, 160V, 1.5A

• High Transition Frequency : fT=100MHz(typ.)\n• Complementary to KTA1225D.;

KEC