EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER DARLINGTON)

HIGH POWER AMPLIFIER DARLINGTON APPLICATION. FEATURES • Complementary to KTD1510 • Recommended for 60W Audio Amplifier Output Stage.

文件：300.05 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A • High DC Current Gain : hFE= 5000(Min) @ IC= -7A, VCE= -4V • Complement to Type KTD1510 APPLICATIONS • High power amplifier applicati

文件：153.1 Kbytes 页数：2 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR

文件：345.61 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

Darlington transistor, TO-3P(N), -150V, -10A

• Recommended for 60W Audio Amplifier Output Stage.;

KEC

EPITAXIAL PLANAR PNP TRANSISTOR

文件：345.61 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

文件：748 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)