EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • A super-minimold package houses 2 transistor. • Excellent temperature response between these 2 transistor. • High pairing property in hFE. • The follwing characteristics are common for Q1, Q2.

文件：398.94 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR PNP TRANSISTOR

文件：49.12 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Complex General Purpose Transistor, US6, -50V, -0.15A

• A super-minimold package houses 2 transistor\n• Excellent temperature response between these 2 transistor\n• High pairing property in hFE;

KEC

开益禧

70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, hig

文件：128.6 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

文件：194.68 Kbytes 页数：4 Pages

MOSPEC

统懋

LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

文件：264.28 Kbytes 页数：9 Pages

NJRC

日本无线