EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTC4512. • Recommended for 30Wᴕ35W Audio Frequency Amplifier Output Stage.

文件：78.89 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR PNP TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION.FEATURES\n• Complementary to KTC4512.\n• Recommended for 30Wᴕ35W Audio Frequency Amplifier Output Stage. • Complementary to KTC4512.\n• Recommended for 30Wᴕ35W Audio Frequency Amplifier Output Stage.;

KEC

开益禧

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. FEATURES • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD-30 dB • COMMON EMIT

文件：82.9 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0

文件：58.91 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0

文件：58.91 Kbytes 页数：8 Pages

NEC

瑞萨