Quad Channel Active EMI & ESD Suppressor for Ethernet Applications

Features • Enables system designers to comply with:  CISPR22 and FCC Part 15, Class B requirements for Radiated and Conducted Emissions  IEC 61000-4-3 requirements for Radiated and Conducted Immunity, Level 3 or higher  IEC 61000-4-2 ESD (Air Discharge) of ±25kV  IEC 61000-4-2 ESD (C

文件：145.21 Kbytes 页数：3 Pages

KINETIC

芯凯电子

Quad Channel Active EMI & ESD Suppressor for Ethernet Applications

• Enables system designers to comply with:• CISPR22 and FCC Part 15, Class B requirements for Radiated and Conducted Emissions\n• IEC 61000-4-3 requirements for Radiated and Conducted Immunity, Level 3 or higher\n• IEC 61000-4-2 ESD (Air Discharge) of ±25kV\n• IEC 61000-4-2 ESD (Contact Discharge) o;

Kinetic

芯凯电子

丝印：LNYWZ；Package：DFN94-36；Quad Channel Active EMI & ESD Suppressor for Ethernet Applications

Features • Enables system designers to comply with:  CISPR22 and FCC Part 15, Class B requirements for Radiated and Conducted Emissions  IEC 61000-4-3 requirements for Radiated and Conducted Immunity, Level 3 or higher  IEC 61000-4-2 ESD (Air Discharge) of ±25kV  IEC 61000-4-2 ESD (C

文件：145.21 Kbytes 页数：3 Pages

KINETIC

芯凯电子

EPITAXIAL PLANAR PNP TRANSISTOR

DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. FEATURES • Adoption of FBET, MBIT Processes. • High Current Capacitance. • Low Collector-to-Emitter Saturation Voltage. • High-Speed Switching. • Ultrasmall Package Facilitates Miniaturization in end Products.

文件：85.66 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

TSM PACKAGE

文件：63.13 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR PNP TRANSISTOR

文件：410.77 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

TSM PACKAGE

文件：63.13 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR PNP TRANSISTOR

文件：410.77 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Low VCE(sat) Transistor, TSM, -50V, -3A

• Adoption of MBIT Processes\n• High Current Capacitance\n• Low Collector to Emitter saturation Voltage\n• High Speed Switching;

KEC

开益禧

PNP Transistor

RM TECHNOLOGY

瑞美科