200V P-Channel MOSFET

文件：1.18788 Mbytes 页数：8 Pages

KERSEMI

200V P-Channel MOSFET

文件：1.18789 Mbytes 页数：8 Pages

KERSEMI

INLINE™ Accessories

文件：296.66 Kbytes 页数：2 Pages

HOFFMANPRODUCTS

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -3A@ TC=25℃ ·Drain Source Voltage- : VDSS= -200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：345.03 Kbytes 页数：2 Pages

ISC

无锡固电