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FQB3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF3P20

QFETP-CHANNEL

FEATURES •AdvancedNewDesign •AvalancheRuggedTechnology •RuggedGateOxideTechnology •VeryLowIntrinsicCapacitances •ExcellentSwitchingCharacteristics •UnrivalledGateCharge:6.0nC(Typ.) •ExtendedSafeOperatingArea •LowerRDS(ON):2.06Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQT3P20

200VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQT3P20TF

P-ChannelQFETMOSFET-200V,-0.67A,2.7

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KSMD3P20

200VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU3P20

200VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    LDR3P20

  • 制造商:

    Pentair Technical Products/Hoffman

  • 功能描述:

    (4) DIN Rails, TS35/7.5, 200mm , fits 200mm, Steel

供应商型号品牌批号封装库存备注价格
台产
24+
SMD
60000
全新原装现货
询价
INFINEON
23+
8000
只做原装现货
询价
INFINEON
23+
7000
询价
3AM
23+
Null
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
乐得瑞
21+
SSOP16
3000
全新原装鄙视假货
询价
SKYWORKS/SILICON LABS(芯科)
22+
QFN-60
39800
通信接口/百分百原装现货
询价
24+
260
询价
CHINAXYJ
23+
SMD
9868
专做原装正品,假一罚百!
询价
ZETEX
23+
SOT23-3
5000
原装正品,假一罚十
询价
XX
24+
XX
5000
只做原装公司现货
询价
更多LDR3P20供应商 更新时间2025-5-17 13:30:00