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MJD3055

TO-252-2LPlastic-EncapsulateTransistors

FEATURES DesignedforGeneralPurposeAmplifierdanLowSpeed SwitchingApplications ElectricallySimiartoMJE3055 DCCurrentGainSpecifiedto10Amperes

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJD3055G

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD3055G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD3055G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD3055G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJE3055

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJE3055

NPN(GENERALPURPOSEANDSWITCHINGAPPLICATIONS)

GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    KSH3055-I

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD/仙童
TO-251
22+
6000
十年配单,只做原装
询价
FAIRCHILD/仙童
23+
TO-251
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FAIRCHILD/仙童
23+
TO-251
6000
原装正品,支持实单
询价
ON Semiconductor
2022+
I-PAK
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
FAIRCHILD/仙童
22+
TO-251
25000
只做原装进口现货,专注配单
询价
onsemi
25+
TO-251-3 短引线 IPak TO-251A
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
SMG
05+
原厂原装
2051
只做全新原装真实现货供应
询价
FSC
2016+
TO-252
3900
只做原装,假一罚十,公司可开17%增值税发票!
询价
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
询价
更多KSH3055-I供应商 更新时间2025-7-29 15:49:00