P沟道MOSFET

Kwansemi

冠禹半导体

P沟道MOSFET

Kwansemi

冠禹半导体

MOSFET

Kwansemi

冠禹半导体

P-Channel Enhancement Mode Vertical D-MOS Transistor

■ Features ● VDS (V) =-300V ● ID =-0.21 A (VGS =-10V) ● RDS(ON)

文件：47.9 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon Spreading Resistance Temperature Sensor in Surface Mount Technology

Features • Temperature dependent Resistor with Positive Temperature Coefficient • SMD plastic package for very small thermal time constants • Fast response • High reliability due to multilayer gold contacts • n-conducting silicon crystal • Polarity independent due to symmetrical construction

文件：25.98 Kbytes 页数：2 Pages

SIEMENS

西门子

Silicon Temperature Sensors

Features • Temperature dependent resistor with positive temperature coefficient • Temperature range – 50 °C to + 150 °C (– 60 F to 300 F) • Available in SMD or leaded or customized packages • Linear output • Excellent longterm stability • Polarity independent due to symmetrical c

文件：182.57 Kbytes 页数：11 Pages

Infineon

英飞凌