EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ● With Built-in Bias Resistors ● Simplify Circuit Design ● Reduce a Quantity of Parts and Manufacturing Process ● High Packing Density.

文件：89.52 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Complex BRT, TESV, -50V, -0.1A

• With Built-in bias resistors\n• Simplify circuit design.\n• Reduce a quantity of Parts and Manufacturing Process;

KEC

开益禧

Transistor with Built-in Bias Resistor

• With Built-in Bias Resistors\n• Reduce a Quantity of Parts and Manufacturing Process\n• High Packing Density.;

KEC

开益禧

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Pa

文件：91.55 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

文件：28.55 Kbytes 页数：2 Pages

EIC

TRANSISTOR INVERTOR INVERTER FOR AIR CONDITIONOR POWER TRANSISTOR BASE DRIVE

Transistor Inverter Inverter For Air Conditioner Power Transistor Base Drive The TOSHIBA TLP557 consists of a GaAℓAs light emitting diode and an integrated photodetector. This unit is 8−lead DIP package. TLP557 is suitable for base driving circuit of power transistor module up to 20A. Extern

文件：304.51 Kbytes 页数：6 Pages

TOSHIBA

东芝