首页 >KPC452其他被动元件>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelSDMOSTMPOWERTransistor GeneralDescription TheAOD452A/LisfabricatedwithSDMOStrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurposeapplicatio | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelSDMOSTMPOWERTransistor GeneralDescription TheAOD452A/LisfabricatedwithSDMOStrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurposeapplicatio | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD452usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications. StandardproductAOD452isPb-free(meetsROHS&Sony259specifications).AOD | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®GenIIIPowerMOSFET •100RgTested •100UISTested APPLICATIONS •DC/DCConversion -SystemPower | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOI452usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOI452isPb-free(meetsROHS&Sony259specifications). Fea | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelSDMOSTMPowerTransistor GeneralDescription TheAOI452AisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurposeapplicati | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.3mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®GenIIIPowerMOSFET •100RgTested •100UISTested APPLICATIONS •DC/DCConversion -SystemPower | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU452usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU452isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®GenIIIPowerMOSFET •100RgTested •100UISTested APPLICATIONS •DC/DCConversion -SystemPower | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU452usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU452isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
45AMPBLOCKDIODES | SHUNYEShunye Enterprise 顺烨电子江苏顺烨电子有限公司 | SHUNYE | ||
45AMPBLOCKDIODES | SHUNYEShunye Enterprise 顺烨电子江苏顺烨电子有限公司 | SHUNYE | ||
SmartHigh-SidePowerSwitch | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
MiniPROFET(N-channelverticalpowerFETwithchargepump) GeneralDescription NchannelverticalpowerFETwithchargepump,groundreferencedCMOScompatibleinput,monolithicallyintegratedinSmartSIPMOS®technology.Fullyprotectedbyembeddedprotectionfunctions. •High-sideswitch •Short-circuitprotection •Inputprotection •Overtemperatu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
MiniPROFET(High-sideswitchShort-circuitprotectionInputprotectionOvertemperatureprotectionwithhysteresis) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
SmartPowerHigh-Side-Switch | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
COSMO |
23+ |
SOP4 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
COSMO |
2122+ |
SOP |
17870 |
全新原装正品现货,假一赔十 |
询价 | ||
COSMO |
22+ |
SOP4 |
50000 |
只做原装假一罚十,欢迎咨询 |
询价 | ||
冠西 |
5000 |
全新原装 |
询价 | ||||
COSMO |
2339+ |
SOPDIP |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
COSMO |
19+ |
SOP5 |
76679 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 | ||
COSMO |
23+ |
SOP5 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
COSMO |
09+ |
SOP5 |
6000 |
绝对原装自己现货 |
询价 | ||
COSMO |
22+ |
SOP |
960000 |
强势库存!继电器专卖! |
询价 | ||
COSMO |
标准封装 |
58250 |
一级代理原装正品现货期货均可订购 |
询价 |
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