Logic高速光耦

CRIA

克里雅

N-channel MOSFET 55 V, 180 A, 1.9 mΩ

Features • Low on-state resistance : RDS(on) = 1.9 mΩ max. ( VGS = 10 V, ID = 90 A ) • Low Ciss : Ciss = 13000 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±180 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：769.92 Kbytes 页数：7 Pages

RENESAS

瑞萨

Ultra-Low Capacitance 1-Line ESD protection

文件：131.47 Kbytes 页数：8 Pages

SEMTECH

先之科

ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 4.5A (8/20μs) RoHS Compliant

文件：2.26952 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子