首页 >KP8N60F-U/P>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGateTMOS PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulatorsconverters,solenoidandrealydrivers. | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGateTMOS PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulatorsconverters,solenoidandrealydrivers. | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelMosfetTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET8.0AMPERES600VOLTSRDS(on)=0.55OHM | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TMOSPOWERFET8.0AMPERES600VOLTSRDS(on)=0.55OHM | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
7.5A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
7.5A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
7.5A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
7.5A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
600VN-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 强茂強茂股份有限公司 | PANJIT | ||
600VN-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 强茂強茂股份有限公司 | PANJIT | ||
IGBT Features ◼600V,8A ◼VCE(sat)(typ.)=1.8V@VGE=15V,IC=8A ◼Highspeedswitching ◼Highersystemefficiency ◼Softcurrentturn-offwaveforms ◼SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, | GWSEMIGoodwork Semiconductor Co., Ltd 唯聖電子唯聖電子有限公司 | GWSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
KEC |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
KEC |
21+ |
TO-220F |
10000 |
原装现货假一罚十 |
询价 | ||
KEC |
2022+ |
TO-220F |
2000 |
原厂代理 终端免费提供样品 |
询价 | ||
KEC |
TO-220F |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
KEC |
24+23+ |
TO-220F |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
KEC |
23+ |
NA/ |
5250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
KEC |
2022+ |
TO-220F |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
KEC |
20+ |
TO-220F |
2000 |
现货很近!原厂很远!只做原装 |
询价 | ||
KEC |
22+ |
TO-220IS(1) |
50000 |
原装正品.假一罚十 |
询价 | ||
KEC |
23+ |
TO-220IS(1) |
6000 |
生态型分销-代理/现货/订货/调货/技术 |
询价 |
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