Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators converters, solenoid and realy drivers.

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MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

文件：70.77 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

文件：70.77 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉

8A, 600V NCHANNEL MOSFET

GENERAL DESCRIPTION SVD8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailor

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SILAN

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