40A竊?00V N-CHANNEL MOSFET

文件：494.24 Kbytes 页数：7 Pages

KIA

可易亚半导体

40A，300V N-CHANNEL MOSFET

KIA

可易亚半导体

Terminal Block

文件：619.81 Kbytes 页数：1 Pages

PF

倍加福

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mod

文件：57.63 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness

文件：57.68 Kbytes 页数：6 Pages

INTERSIL