N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS(Min.)= 600V, ID= 4.5A • Drain-Source ON Re

文件：500.25 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08669 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS(Min.)= 600V, ID= 4.5A • Drain-Source ON Re

文件：500.25 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

原装

SAMSUNG/三星

上传：中天科工半导体（深圳）有限公司

DIP

KINGHELM金航标

上传：深圳市科恒伟业电子有限公司