N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, ID

文件：83.68 Kbytes 页数：7 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：584.89 Kbytes 页数：7 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Planar MOSFETs, TO-220IS(1), 600V, 8A

• Fast switching time\n• Low on resistance and gate charge\n• Suitable for using switching mode power supplies.;

KEC

开益禧

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators converters, solenoid and realy drivers.

文件：386.73 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

文件：70.77 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

文件：70.77 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉