N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, ID

文件：83.68 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：584.89 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

Planar MOSFETs, TO-220IS(1), 600V, 8A

• Fast switching time\n• Low on resistance and gate charge\n• Suitable for using switching mode power supplies.;

KEC

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, ID

文件：83.68 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10751 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

商品目录 MOS(场效应管) 连续漏极电流（Id）（25°C 时） 7.5A(Tc) 漏源电压（Vdss） 600V 栅源极阈值电压 4V @ 250uA 漏源导通电阻 1.2 Ω @ 3.75A,10V 类型 N 沟道 最大功率耗散（Ta） 48W(Tc)

文件：192.03 Kbytes 页数：6 Pages

KIA

可易亚半导体