N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES · VDSS= 500V, ID= 4.3A · D

文件：70.03 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES · VDSS= 500V, ID= 4.3A · D

文件：404.7 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES

文件：69.85 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：410.36 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：387.69 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：388.36 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description\nThis planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.FEATURES\n· VDSS= 500V, ID= 4.3A\n· Drain · VDSS= 500V, ID= 4.3A\n· Drain-Source ON Resistance : RDS(ON)=1.4Ω (Max) @VGS = 10V\n· Qg(typ) = 12nC;

KEC

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES · VDSS= 500V, ID= 4.3A · D

文件：70.03 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES

文件：69.85 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES

文件：69.85 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)