N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=800V, ID

文件：389.87 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=800V, ID

文件：391.06 Kbytes 页数：6 Pages

MORNSUN

金升阳

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：1.28966 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：389.87 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

Planar MOSFETs, TO-220IS(1), 800V, 4A

• Fast switching time\n• Low on resistance and gate charge\n• Suitable for using switching mode power supplies.;

KEC