N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=650V, ID

文件：419.78 Kbytes 页数：7 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=650V, ID

文件：419.78 Kbytes 页数：7 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Advanced high cell denity trench technology for ultra RDS(ON)

文件：708.19 Kbytes 页数：4 Pages

KERSEMI

Green device available.

文件：709.41 Kbytes 页数：4 Pages

KERSEMI