KF5N25D

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES •VDSS=250V,ID=4.4A •Dra

KF5N25D_15

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF5N25F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES •VDSS=250V,ID=5A •Drain

MTD5N25E

PowerFieldEffectTransistor

MTD5N25E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,pow

MTD5N25E

TMOSPOWERFET5.0AMPERES250VOLTSRDS(on)=1.0OHM

TMOSE-FET™PowerFieldEffectTransistorDPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery