丝印：KF1；Package：SOT-23；SOT-23 Plastic-Encapsulate Diode

ZENER DIODE FEATURES： Planar Die Construction 350mW Power Dissipation on FR-4 PCB General purpose, Medium Current Ideally Suited for Automated Assembly

文件：267.81 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：KF1；Package：SOT-323；Planar Die Construction

FEATURES Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally Suited for Automated Assembly Processes

文件：853.63 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：KF1；Package：SOT-363；Planar Die Construction

Features • Planar Die Construction • Dual Isolated Zeners in Ultra-Small Surface Mount Package • Ideally Suited for Automated Assembly Processes • Lead Free/RoHS Compliant (Note 5)

文件：856.07 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

DIODE MODULE

DIODE MODULE Power Diode Module DD100HB series are designed for various rectifier circuits. DD100HB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1,600V is avaiable for various input

文件：104.42 Kbytes 页数：2 Pages

SANREX

三社

DIODE MODULE

DIODE MODULE Power Diode Module DD100HB series are designed for various rectifier circuits. DD100HB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1,600V is avaiable for various input

文件：104.42 Kbytes 页数：2 Pages

SANREX

三社

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=500V, ID

文件：80.72 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies

文件：83.97 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=500V, ID

文件：80.72 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=500V, ID

文件：80.72 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies

文件：83.97 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)