SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package : SOT-23. • Low Forward Voltag : VF=0.9V(Typ.). • Fast Reverse Recovery Time : trr=1.6ns(Typ.). • Small Total Capacitance : CT=0.9pF(Typ.).)

文件：200.83 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Small Signal Switching Diode, SOT-23, 80V, 300mA

• Low Forward Voltage : VF=0.9V (typ.)\n• Fast Reverse Recovery Time : trr=1.6nS(typ.)\n• Small Total Capacitance : CT=0.9pF (typ.)\n• Small Package : SOT-23.;

KEC

开益禧

SILICON EPITAXIAL PLANAR DIODE

文件：527.42 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

LM196/LM396 10 Amp Adjustable Voltage Regulator

文件：295.32 Kbytes 页数：14 Pages

NSC

国半

Silicon Complementary Transistors Audio Power Output and Medium Power Switching

Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: hFE= 2.3 Min @ IC= 7A Collector–Emitter Sustaining Voltage: VCE

文件：24.27 Kbytes 页数：2 Pages

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体