VSM PACKAGE

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Very Small Package : VSM. • Low Forward Voltage : VF=0.9V (Typ.). • Fast Reverse Recovery Time : trr=1.6ns(Typ.). • Small Total Capacitance : CT=0.9pF (Typ.). • Suffix U : Qualified to AEC-Q101. ex) KDS121V-RTK/HU

文件：12.36 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

SILICON EPITAXIAL PLANAR DIODE

文件：358.33 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Small Signal Switching Diode, VSM, 80V, 300mA

• Low Forward Voltage : VF=0.9V (typ.)\n• Fast Reverse Recovery Time : trr=1.6nS (typ.)\n• Small Total Capacitance : CT=0.9pF (typ.)\n• Small Package : VSM.;

KEC

开益禧

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

文件：23.4 Kbytes 页数：1 Pages

MOSEL

茂矽电子

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

文件：206.87 Kbytes 页数：4 Pages

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件：251.64 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉