SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)

LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES • Low Forward Voltage : VF(2)=0.23V (Typ.) • Small Package : ESC.

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KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Small Signal Schottky Barrier Diode, ESC, 20V, 0.1A

• Low Forward Voltage : VF(2)=0.23V (Typ.);

KEC

开益禧

Square Type

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PANASONIC

松下

Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz

Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: ● Specified 12.5 Volt, 470MHz Characteristic: Output Power = 60 Watts Minimum Gain = 4.4dB E

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NTE

CdS photoconductive cell

CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their operating circ

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HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社