GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB847 (4-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件：276.36 Kbytes 页数：9 Pages

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KB847 - 光电耦合器, Transistor Output, 4通道, DIP, 16 引脚, 50 mA, 5 kV, 50 %

The KB847 is a 4-channel 16-pin general purpose Optically Coupled Isolator containing a GaAS light emitting diode and an NPN silicon phototransistor. The single transistor type optocoupler is suitable for registers, copiers, automatic vending machines, programmable logic controller, signal transmiss ·2.54mm Lead pitch\n·>=0.6mm Solid insulation thickness between emitting diode and output phototransistor\n·50mA Forward current\n·200mW Total power dissipation;

Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB847 (4-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件：276.36 Kbytes 页数：9 Pages

Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB847 (4-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件：276.36 Kbytes 页数：9 Pages

Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB847 (4-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件：276.36 Kbytes 页数：9 Pages

Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB847 (4-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件：276.36 Kbytes 页数：9 Pages

Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB847 (4-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件：276.36 Kbytes 页数：9 Pages

Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB847-B (4-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull

文件：221.88 Kbytes 页数：8 Pages

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今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB847 (4-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件：276.36 Kbytes 页数：9 Pages

Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB847 (4-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件：276.36 Kbytes 页数：9 Pages

Kingbright

今台电子