256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM

文件：400.63 Kbytes 页数：18 Pages

Samsung

三星

Service Manual

文件：6.61144 Mbytes 页数：67 Pages

Panasonic

松下

丝印：K7A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators • Motor Drivers Features (1) Fast reverse recovery time: trr = 75 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3

文件：242.61 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K7A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.64 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.25 mA)

文件：383.76 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K7A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.795 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.28 mA)

文件：446.02 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K7A90E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)

文件：231.5 Kbytes 页数：9 Pages

TOSHIBA

东芝

512Kx36 & 1Mx18 Synchronous SRAM

Samsung

三星

有源晶振

KYX

凯越翔电子

128Kx18 Synchronous SRAM

Samsung

三星