丝印：K7A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.795 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.28 mA)

文件：446.02 Kbytes 页数：10 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：307.33 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 6.5 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 800 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

Low-Noise, Wide-Bandwidth, High PSRR, Low-Dropout 1-A Linear Regulator

文件：1.90627 Mbytes 页数：31 Pages

TI

德州仪器

Low-Noise, High-Bandwidth PSRR,Low-Dropout 1A Linear Regulator

文件：1.52057 Mbytes 页数：24 Pages

TI

德州仪器

Low-Noise, High-Bandwidth PSRR, Low-Dropout 1A Linear Regulator

文件：1.16881 Mbytes 页数：20 Pages

TI

德州仪器