64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

GENERAL DESCRIPTION The K6X8016C3B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

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Samsung

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64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

GENERAL DESCRIPTION The K6X8016C3B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

文件：130.19 Kbytes 页数：9 Pages

Samsung

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64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

GENERAL DESCRIPTION The K6X8016C3B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

文件：130.19 Kbytes 页数：9 Pages

Samsung

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64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

GENERAL DESCRIPTION The K6X8016C3B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

文件：130.19 Kbytes 页数：9 Pages

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Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

文件：182.17 Kbytes 页数：6 Pages

TOSHIBA

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256Kx36 & 512Kx18 Synchronous SRAM

GENERAL DESCRIPTION The K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. FEATURES • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Co

文件：401.61 Kbytes 页数：18 Pages

Samsung

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256Kx36 & 512Kx18 Synchronous SRAM

GENERAL DESCRIPTION The K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. FEATURES • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Co

文件：401.61 Kbytes 页数：18 Pages

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512Kx36 & 1Mx18 Synchronous SRAM

文件：263.99 Kbytes 页数：19 Pages

Samsung

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512Kx36 & 1Mx18 Synchronous SRAM

文件：263.99 Kbytes 页数：19 Pages

Samsung

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512Kx36 & 1Mx18 Synchronous SRAM

文件：419.75 Kbytes 页数：19 Pages

Samsung

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