丝印：K7A90E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)

文件：231.5 Kbytes 页数：9 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.55 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：π-MOSⅧ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 7 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 900 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝

TPS7A90 500-mA, High-Accuracy, Low-Noise LDO Voltage Regulator

1 Features 1• 1.0% accuracy over line, load, and temperature • Low output noise: 4.7 μVRMS (10 Hz–100 kHz) • Low dropout: 100 mV (max) at 0.5 A • Wide input voltage range: 1.4 V to 6.5 V • Wide output voltage range: 0.8 V to 5.7 V • High power-supply rejection ratio (PSRR): – 60 dB at D

文件：2.69767 Mbytes 页数：34 Pages

TI

德州仪器

TPS7A90 500-mA, High-Accuracy, Low-Noise LDO Voltage Regulator

文件：3.16712 Mbytes 页数：34 Pages

TI

德州仪器

500-mA, High-Accuracy, Low-Noise LDO Voltage Regulator

文件：2.12596 Mbytes 页数：33 Pages

TI

德州仪器