丝印：K75MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 75 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.60601 Mbytes 页数：17 Pages

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丝印：K75MCH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features • VCE = 1200 V • IC = 75 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C • Optimized for high efficiency in high sp

文件：1.50461 Mbytes 页数：17 Pages

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丝印：K75MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 75 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.69225 Mbytes 页数：17 Pages

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丝印：K75MCH7；Package：PG-TO247-4-STD-NT3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 75 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.72565 Mbytes 页数：17 Pages

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丝印：K75MCH3；Package：PG-TO247-3-46；Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode

文件：2.09673 Mbytes 页数：16 Pages

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丝印：K75MCS6；Package：PG-TO247-3-46；High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode

文件：2.0781 Mbytes 页数：16 Pages

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丝印：K75MCT2；Package：PG-TO247-3-46；Low Vce(sat) IGBT in TRENCHSTOP??2 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled Diode

文件：1.62798 Mbytes 页数：16 Pages

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丝印：K75MCH3；Package：PG-TO247-4-2；Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode

文件：2.04734 Mbytes 页数：16 Pages

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丝印：K75MCS6；Package：PG-TO247-4-2；High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode

文件：2.0296 Mbytes 页数：16 Pages

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